Technology Platform CHyN Clean room
The CHyN clean room is a state-of-the-art ISO Class 4 facility dedicated to complex nanofabrication and interdisciplinary research. Operated jointly by Universität Hamburg (UHH), Deutsches Elektronen-Synchrotron (DESY), and the Max Planck Institute for the Structure and Dynamics of Matter (MPSD).
The lab is located in the Center for Hybrid Nanostructures (CHyN), Building 600, on the research campus Science City Hamburg Bahrenfeld (SCHB).
Management and Coordination
The CHyN clean room is operated by a team of engineers and senior researchers from Universität Hamburg, Deutsches Elektronen-Synchrotron, and the Max Planck Institute for the Structure and Dynamics of Matter, under the supervision of the clean room board, which defines the scientific direction and strategic development of the facility.
The clean room coordinator acts as the central point of contact between users, staff, facility management, and the board, and is responsible for daily operations and ensuring efficient facility use.
Content
Curious to know more about the CHyN clean room facility?
The CHyN clean room consists of two main areas – the Yellow Room and the White Room – supported by user laboratories located outside the cleanroom complex. Together, these facilities enable advanced processing of extremely small structures down to 500 nanometers and below, high-resolution imaging, elemental analysis, and ion implantation.
The Yellow Room – Structuring at the Nanoscale
The Yellow Room is designed for preparative synthesis and wet-chemical processes, as well as analytical work in a UV-protected environment. It is mainly used for lithographic structuring, allowing fabrication from the sub-micrometer to the nanometer scale. Material properties such as surface roughness, layer thickness, and etch depth can also be measured and qualified here.
The White Room – Deposition and Characterization of Functional Materials
The White Room focuses on nano-deposition of thin film systems, including semiconductor materials, functional materials, insulating oxide or nitride layers, and metallic layers such as gold, titanium, platinum, aluminum, or copper. The room also enables dry etching, structural patterning, and optical characterization, allowing materials to be developed into highly functional structures
Access and staff team
Access to the CHyN clean room follows a two-step process: a general safety introduction followed by approval of a submitted process flow.
Experienced staff provide hands-on training and support. After completing training and registering in the booking system (Cluster Market), users can independently access and reserve equipment.
The dates and location for the scheduled monthly routine safety introduction could be downloaded here (click pdf file).
Contact
To learn more or request access to the CHyN clean room facility, feel free to get in touch via: chyn-cleanroom.min"AT"uni-hamburg.de
Dr. -Ing. Lewis Olaniyi Akinsinde
Coordinator CHyN Clean Room Technology Platform
Office: CFEL - Center for Free Electron Laser Science Hamburg, Building 99, Room O1.125
Luruper Chaussee 149
D-22761 Hamburg
Tel.: +49 (0)151 5538 8158
E-Mail: chyn-cleanroom.min"AT"uni-hamburg.de
For more information see the CHyN clean room homepage
Users
The facility is primarily used by undergraduate and graduate students, PhD candidates, postdoctoral researchers, and senior scientists conducting fundamental research in fields such as pharmacy, nanotechnology, biophysics, materials science, microelectronics, life sciences, and quantum technology. Researchers from other disciplines are also welcome to use the facility.
Publications
2024
Haugg, S.; Mochalski, L. F.; Hedrich, C.; González Díaz-Palacio, I.; Deneke, K.; Zierold, R.; Blick, R. H. Field Emission from Carbon Nanotubes on Titanium Nitride-Coated Planar and 3D-Printed Substrates. Nanomaterials 2024, 14 (9), 781. https://doi.org/10.3390/nano14090781.
2022
Haugg, S.; Hedrich, C.; Zierold, R.; Blick, R. H. Field Emission Characteristics of ZnO Nanowires Grown by Catalyst-Assisted MOCVD on Free-Standing Inorganic Nanomembranes. J. Phys. D. Appl. Phys. 2022, 55 (25), 255104. https://doi.org/10.1088/1361-6463/ac5d05.
Harberts, J.; Siegmund, M.; Hedrich, C.; Kim, W.; Fontcuberta i Morral, A.; Zierold, R.; Blick, R. H. Generation of Human IPSC-Derived Neurons on Nanowire Arrays Featuring Varying Lengths, Pitches, and Diameters. Adv. Mater. Interfaces 2022, 9 (24), 2200806. https://doi.org/10.1002/admi.202200806.
Grote, L.; Seyrich, M.; Döhrmann, R.; Harouna-Mayer, S. Y.; Mancini, F.; Kaziukenas, E.; Fernandez-Cuesta, I.; A. Zito, C.; Vasylieva, O.; Wittwer, F.; Odstrčzil, M.; Mogos, N.; Landmann, M.; Schroer, C. G.; Koziej, D. Imaging Cu2O Nanocube Hollowing in Solution by Quantitative in Situ X-Ray Ptychography. Nat. Commun. 2022, 13 (1). https://doi.org/10.1038/s41467-022-32373-2.
Esmek, F.M; Erichlandwehr, T; Brkovic, N; Pranzner, N.P; Teuber, J.P; Fernandez-Cuesta, I. Pillar-structured 3D inlets fabricated by dose-modulated e-beam lithography and nanoimprinting for DNA analysis in passive, clogging-free, nanofluidic devices. Nanotechnology 33, 2022, 385301, (12pp). https://doi.org/10.1088/1361-6528/ac780d.
2021
Haugg, S.; Hedrich, C.; Blick, R. H.; Zierold, R. Subtractive Low-Temperature Preparation Route for Porous SiO2 Used for the Catalyst-Assisted Growth of ZnO Field Emitters. Nanomaterials 2021, 11 (12), 3357. https://doi.org/10.3390/nano11123357.
2020
Harberts, J.; Haferkamp, U.; Haugg, S.; Fendler, C.; Lam, D.; Zierold, R.; Pless, O.; Blick, R. H. Interfacing Human Induced Pluripotent Stem Cell-Derived Neurons with Designed Nanowire Arrays as a Future Platform for Medical Applications. Biomater. Sci. 2020, 8 (9), 2434–2446. https://doi.org/10.1039/d0bm00182a.
2019
Esmek, F. M.; Bayat, P.; Pérez-Willard, F.; Volkenandt, T.; Blick, R. H.; Fernandez-Cuesta, I. Sculpturing Wafer-Scale Nanofluidic Devices for DNA Single Molecule Analysis. Nanoscale 2019, 11 (28), 13620–13631. https://doi.org/10.1039/c9nr02979f.
Harberts, J.; Zierold, R.; Fendler, C.; Koitmäe, A.; Bayat, P.; Fernandez-Cuesta, I.; Loers, G.; Diercks, B. P.; Fliegert, R.; Guse, A. H.; Ronning, C.; Otnes, G.; Borgström, M.; Blick, R. H. Culturing and Patch Clamping of Jurkat T Cells and Neurons on Al2O3 Coated Nanowire Arrays of Altered Morphology. RSC Adv. 2019, 9 (20), 11194–11201. https://doi.org/10.1039/c8ra05320k.
Hedrich, C.; Haugg, S.; Pacarizi, L.; Furlan, K. P.; Blick, R. H.; Zierold, R. Low-Temperature Vapor-Solid Growth of ZnO Nanowhiskers for Electron Field Emission. Coatings 2019, 9 (11), 698. https://doi.org/10.3390/coatings9110698.
Fendler, C.; Denker, C.; Harberts, J.; Bayat, P.; Zierold, R.; Loers, G.; Münzenberg, M.; Blick, R. H. Microscaffolds by Direct Laser Writing for Neurite Guidance Leading to Tailor-Made Neuronal Networks. Adv. Biosyst. 2019, 3 (5), 1–8. https://doi.org/10.1002/adbi.201800329.
List of Equipment

Photo: UHH/Akinsinde
Raith Voyager Electron Beam Lithography System
Field of Application: High-precision 50 kV electron beam lithography system with a nominal accuracy of 2 nm and minimum feature size of 6 nm (≈10 nm achieved internally). Supports substrate sizes from 5 mm to 4 inches. Automatic Height Sensing (2024 upgrade) enables optimized focus across the wafer and reduces stitching errors. TRAXX (FBMS) allows seamless patterning of centimeter-scale paths, and PERIODIXX (MBMS) enables stitch-free periodic structures over large areas
Location: EBL Voyager lab, CHyN Bldg. 600, RM EG. 063

Photo: UHH/Stützle
Raith Picomaster Nanopattern Generator:
Field of Application: High-precision maskless laser lithography system for research and prototyping, supporting substrates up to 125 × 125 mm². Resolution up to 2 nm with scan speeds 20–200 mm/s and flexible step sizes
Location: CHyN Clean room, Yellow room, CHyN Bldg. 600, RM EG. 034

Photo: UHH/Stützle
UV Lithography Mask Aligner MJB4 from Karl Süss company
Field of Application: UV lithography system (UVA 365 nm, UVB 313 nm) supporting contact/proximity exposure with feature sizes 1–5 µm. Handles wafers up to 100 mm (4") with precise XYZ alignment for microfluidics, MEMS, microfabrication and many more applications.
Location: CHyN Clean room, Yellow room, CHyN Bldg. 600, RM EG. 034

Photo: UHH/Stützle
High-vacuum Coating System from Creavac: Creamet 450 E-Beam S3 Coating System
Field of Apllication:The CREAMET 450 e-beam S3 from CREAVAC is a high-vacuum coating system for precise thin-film deposition on substrates up to 4 inches. It combines a 6-pocket electron beam evaporator, three magnetron sputter sources (RF, DC, HiPIMS), and an ion beam source, allowing uniform deposition of metals and functional materials. The CREACONTROL system ensures precise process control, real-time monitoring, and reproducible coatings.
Location: CHyN Clean room, White room, CHyN Bldg. 600, RM EG. 035

Photo: UHH/Stützle
AT200M Atomic Layer Deposition (ALD) System
Field of Application: AT200M – Compact tabletop ALD system for single 2” wafers, supporting Pt, Hf, Ti, Si (Al in future) with H₂O, O₂, and O₃ reactants.
High-vacuum, heated chamber and manifolds enable precise thin-film deposition, e.g., 10 nm Ti in ~20 min.
Location: CHyN Clean room, White room, CHyN Bldg. 600, RM EG. 035

Photo: UHH/Stützle
Plasma Enhanced CVD Systems SI 500D 214 from Sentech
Field of Application: The inductively coupled plasma enhanced CVD (PECVD) system SI 500D 214 from Sentech is a low-damage, low-temperature PECVD system for depositing dielectric and passivation layers (SiOx, SixNy, SiC, doped layers).
- PTSA plasma source provides homogeneous high-density plasma with low ion energy.
Temperature-controlled substrate with He backside cooling ensures high-quality deposition. - Automated vacuum system supports NH₃, SiH₄, CF₄, O₂, and Ar process gases
Location: CHyN Clean room, White room, CHyN Bldg. 600, RM EG. 035

Photo: UHH/Stützle
Reactive Ion Etcher SI 500 215
Field of Applications: The Sentech SI 500D 214 enables low-temperature, low-damage deposition of dielectric and passivation layers such as SiOx, SixNy, SiC, and doped films.
The system key features include:
- Its PTSA plasma source provides uniform, high-density plasma with low ion energy, ensuring high-quality, low-stress layers.
- The dynamic, temperature-controlled substrate with helium backside cooling allows precise layer growth.
- Fully automated vacuum system and versatile process gases (NH₃, SiH₄, CF₄, O₂, Ar) ensure reproducible and efficient deposition.
Location: CHyN Clean room, Yellow room, CHyN Bldg. 600, RM EG. 035

Photo: UHH/Akinsinde
FIB-SEM - ZEISS Crossbeam 550 coupled FIB
Field of Application: Zeiss Crossbeam 550 – High-resolution FIB-SEM (<10 nm) for imaging conductive and non-conductive materials, with optional ion beam milling. The Integrated EDS system enables elemental analysis of thin films, microstructures, and nanostructures..
Location: EBL Voyager lab, CHyN Bldg. 600, RM EG. 060